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PE2012 Datasheet, semi one

PE2012 Datasheet, semi one

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PE2012 mosfet equivalent

  • n-channel enhancement mode power mosfet.
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PE2012 Features and benefits

PE2012 Features and benefits


* VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V
* High power and current handing capability
* Lead free product is acquired
* Surf.

PE2012 Application

PE2012 Application

. General Features
* VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V
* High power and curr.

PE2012 Description

PE2012 Description

The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications . General Features
* VDS = 20V,ID =1.

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TAGS

PE2012
N-Channel
Enhancement
Mode
Power
MOSFET
semi one

Manufacturer


semi one

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